ROHM EMF5T2R

ROHM · Transistors (BJTs) · MPN EMF5T2R

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)260MHz
Emitter-Base Voltage VEBO6V
DC Current Gain68
Vce Saturation(VCE(sat))250mV
Output Voltage(VO(on))300mV@10mA,500uA
Input Resistor47kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@2mA,300mV
Voltage - Input(Max)(VI(off))500mV@100uA,5V
Current - Collector(Ic)500mA

Technical details

68 150mW 500mA 12V 1 NPN Pre-Biased, 1 PNP SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

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