ROHM · Transistors (BJTs) · MPN EMD29T2R
No reviews yet — be the first to review ROHM EMD29T2R.
| Current - Collector Cutoff | - |
|---|---|
| Transition frequency(fT) | 260MHz;250MHz |
| Emitter-Base Voltage VEBO | - |
| DC Current Gain | 30 |
| Vce Saturation(VCE(sat)) | - |
| Output Voltage(VO(on)) | - |
| Input Resistor | 1.3kΩ;13kΩ |
| Resistor Ratio | 10;1 |
| Pd - Power Dissipation | 120mW |
| Voltage - Input(Max)(VI(off)) | - |
| Input Voltage (VI(on)@Ic,Vce) | 2.5V@20mA,300mV;3V@2mA,300mV |
| Current - Collector(Ic) | 100mA;500mA |
30 120mW 1 NPN Pre-Biased, 1 PNP Pre-Biased SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS