ROHM EMB9T2R

ROHM · Transistors (BJTs) · MPN EMB9T2R

No reviews yet — be the first to review ROHM EMB9T2R.

Specifications

Transition frequency(fT)250MHz
DC Current Gain68
Output Voltage(VO(on))300mV@5mA,250uA
typePNP
Input Resistor13kΩ
Resistor Ratio4.7
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

68 2 PNP Pre-Biased Transistors 150mW 100mA 50V SOT-563(SOT-666) Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)