ROHM · Transistors (BJTs) · MPN EMB10T2R
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| Transition frequency(fT) | 250MHz |
|---|---|
| DC Current Gain | 80 |
| Output Voltage(VO(on)) | 100mV@5mA,250uA |
| type | PNP |
| Input Resistor | 2.2kΩ |
| Resistor Ratio | 21 |
| Number | 2 PNP Pre-Biased Transistors |
| Pd - Power Dissipation | 150mW |
| Input Voltage (VI(on)@Ic,Vce) | 1.1V@5mA,300mV |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
80 2 PNP Pre-Biased Transistors 150mW 100mA 50V Bipolar Transistor Arrays, Pre-Biased RoHS