ROHM EM6M2T2R

ROHM · FETs & Power MOSFETs · MPN EM6M2T2R

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)1.2Ω@4.5V
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)10pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)25pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)10pF

Technical details

N-Channel+P-Channel Array 20V 200mA 150mW Surface Mount SOT-563(SOT-666)

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