ROHM EM6M1T2R

ROHM · FETs & Power MOSFETs · MPN EM6M1T2R

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)-
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage30V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)5pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)50pF
Gate Charge(Qg)1.2nC@4.5V
Operating Temperature-
Output Capacitance(Coss)9pF

Technical details

200mA 150mW 2V 1 N-Channel + 1 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS

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