ROHM EM6J1T2R

ROHM · FETs & Power MOSFETs · MPN EM6J1T2R

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Specifications

Current - Continuous Drain(Id)200mA
RDS(on)1.2Ω@4.5V
Pd - Power Dissipation150mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)6pF
Number2 P-Channel
Input Capacitance(Ciss)115pF
Gate Charge(Qg)1.4nC@4.5V
Vgs±10V
Operating Temperature-55℃~+150℃

Technical details

200mA 1.2Ω@4.5V 150mW 1V 2 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS

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