ROHM · FETs & Power MOSFETs · MPN EM6J1T2R
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| Current - Continuous Drain(Id) | 200mA |
|---|---|
| RDS(on) | 1.2Ω@4.5V |
| Pd - Power Dissipation | 150mW |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 115pF |
| Gate Charge(Qg) | 1.4nC@4.5V |
| Vgs | ±10V |
| Operating Temperature | -55℃~+150℃ |
200mA 1.2Ω@4.5V 150mW 1V 2 P-Channel SOT-563(SOT-666) FET, MOSFET Arrays RoHS