ROHM DTDG14GPT100

ROHM · Transistors (BJTs) · MPN DTDG14GPT100

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Vce Saturation(VCE(sat))400mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)1A
Input Resistor13kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation2W

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 60V 1A 2W Surface Mount TO-243AA

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