ROHM DTD713ZETL

ROHM · Transistors (BJTs) · MPN DTD713ZETL

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Specifications

Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO30V
DC Current Gain140
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)200mA
Output Voltage(VO(on))300mV
Input Resistor1kΩ
typeNPN
Resistor Ratio10
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 30V 200mA 150mW Surface Mount SOT-416

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