ROHM DTD543EETL

ROHM · Transistors (BJTs) · MPN DTD543EETL

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Specifications

Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain115
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor4.7kΩ
typeNPN
Resistor Ratio1
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)2.5V@20mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 12V 500mA 150mW Surface Mount SC-75(SOT-416)

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