ROHM DTD513ZETL

ROHM · Transistors (BJTs) · MPN DTD513ZETL

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Specifications

Transition frequency(fT)260MHz
Collector - Emitter Voltage VCEO12V
DC Current Gain140
Vce Saturation(VCE(sat))300mV
Operating Temperature-
Current - Collector(Ic)500mA
Output Voltage(VO(on))60mV
Input Resistor1kΩ
typeNPN
Resistor Ratio12
Number1 NPN (Pre-Biased)
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 12V 500mA 150mW Surface Mount SOT-416

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