ROHM · Transistors (BJTs) · MPN DTD143ECHZGT116
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| Transition frequency(fT) | 200MHz |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| DC Current Gain | 47 |
| Vce Saturation(VCE(sat)) | 300mV |
| Operating Temperature | -40℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 4.7kΩ |
| Resistor Ratio | 1 |
| Pd - Power Dissipation | 200mW |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V |
| Input Voltage (VI(on)@Ic,Vce) | 3V@20mA,300mV |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount SOT-23