ROHM DTD123TKT146

ROHM · Transistors (BJTs) · MPN DTD123TKT146

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Input Resistor2.2kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 40V 500mA 200mW Surface Mount TO-236-3(SOT-23-3)

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