ROHM DTD123TCT116

ROHM · Transistors (BJTs) · MPN DTD123TCT116

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)500mA
Input Resistor2.2kΩ
typeNPN
Number1 NPN (Pre-Biased)
Pd - Power Dissipation200mW

Technical details

40V 100 500mA NPN 1 NPN (Pre-Biased) 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

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