ROHM · Transistors (BJTs) · MPN DTD114ECT116
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| Collector - Emitter Voltage VCEO | 50V |
|---|---|
| DC Current Gain | 56 |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 500mA |
| Output Voltage(VO(on)) | 300mV |
| Input Resistor | 10kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN (Pre-Biased) |
| Pd - Power Dissipation | 200mW |
| Input Voltage (VI(on)@Ic,Vce) | 3V |
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 200mW Surface Mount TO-236-3(SOT-23-3)