ROHM DTD113ZUT106

ROHM · Transistors (BJTs) · MPN DTD113ZUT106

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain82
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor1kΩ
Resistor Ratio12
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))300mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 500mA 200mW Surface Mount SOT-323

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