ROHM DTC115EE3HZGTL

ROHM · Transistors (BJTs) · MPN DTC115EE3HZGTL

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain82
Operating Temperature-
Vce Saturation(VCE(sat))-
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor130kΩ
Resistor Ratio1.2
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 100mA 150mW Surface Mount SC-75(SOT-416)

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