ROHM DTC114EMGT2L

ROHM · Transistors (BJTs) · MPN DTC114EMGT2L

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Current - Collector(Ic)100mA
Operating Temperature-25℃~+150℃
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor13kΩ
Number1 NPN (Pre-Biased)
typeNPN
Resistor Ratio1.2
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount VMT-3

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