ROHM DTA123JETL

ROHM · Transistors (BJTs) · MPN DTA123JETL

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor2.86kΩ
typePNP
Resistor Ratio26
Number1 PNP Pre-Biased
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-416

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