ROHM DTA114TCAT116

ROHM · Transistors (BJTs) · MPN DTA114TCAT116

No reviews yet — be the first to review ROHM DTA114TCAT116.

Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain600
Vce Saturation(VCE(sat))300mV
Current - Collector(Ic)100mA
Input Resistor13kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

50V 600 100mA PNP 1 PNP Pre-Biased 200mW TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)