ROHM DTA044EEBTL

ROHM · Transistors (BJTs) · MPN DTA044EEBTL

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Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain80
Vce Saturation(VCE(sat))150mV
Operating Temperature-40℃~+150℃
Current - Collector(Ic)30mA
Output Voltage(VO(on))150mV
Input Resistor47kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))800mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-416

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