ROHM DTA023EEBTL

ROHM · Transistors (BJTs) · MPN DTA023EEBTL

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain20
Operating Temperature-40℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))100mV
Input Resistor2.2kΩ
Resistor Ratio1
Number1 PNP Pre-Biased
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)2.6V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 150mW Surface Mount SOT-416

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