ROHM BSM180D12P3C007

ROHM · FETs & Power MOSFETs · MPN BSM180D12P3C007

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Specifications

ConfigurationHalf-Bridge
Current - Continuous Drain(Id)180A
RDS(on)-
Pd - Power Dissipation880W
Gate Threshold Voltage (Vgs(th))-
Drain to Source Voltage1.2kV
Type-
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)9nF
Gate Charge(Qg)-
Operating Temperature-40℃~+150℃

Technical details

180A 880W 2 N-Channel FET, MOSFET Arrays RoHS

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