ROHM · FETs & Power MOSFETs · MPN BM3G007MUV-LBE2
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 49.9pF |
| Current - Continuous Drain(Id) | 20.9A |
| Operating Temperature - | -40℃~+105℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Technology | E-mode |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 70mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
650V 20.9A 70mΩ 1 N-channel N-Channel VQFN046V8080 Single FETs, MOSFETs RoHS