ROHM 2SD1963T100R

ROHM · Transistors (BJTs) · MPN 2SD1963T100R

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
DC Current Gain180
Pd - Power Dissipation2W
typeNPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))450mV

Technical details

20V 180 NPN 3A TO-243AA Single Bipolar Transistors RoHS

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