ROHM 2SC5876U3T106

ROHM · Transistors (BJTs) · MPN 2SC5876U3T106

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain120
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 60V 500mA 300MHz 200mW Surface Mount SC-70

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