ROHM 2SB1132T100P

ROHM · Transistors (BJTs) · MPN 2SB1132T100P

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO32V
DC Current Gain82
Pd - Power Dissipation2W
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

32V 82 PNP 1A TO-243AA Single Bipolar Transistors RoHS

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