RENESAS UPA2816T1S-E2-AT

RENESAS · FETs & Power MOSFETs · MPN UPA2816T1S-E2-AT

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Specifications

Gate Charge(Qg)33.4nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)17A
Operating Temperature --55℃~+150℃
Pd - Power Dissipation12W
RDS(on)15.5mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.16nF

Technical details

30V 17A 12W 15.5mΩ@10V 1 P-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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