RENESAS UPA2815T1S-E2-AT

RENESAS · FETs & Power MOSFETs · MPN UPA2815T1S-E2-AT

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)47nC@10V
Current - Continuous Drain(Id)21A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation14.5W
RDS(on)11mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.76nF

Technical details

30V 21A 14.5W 11mΩ@10V 1 P-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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