RENESAS · FETs & Power MOSFETs · MPN TP65H300G4LSGB-TR
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| Gate Charge(Qg) | 9.6nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 6.5A |
| Output Capacitance(Coss) | 16pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.4V |
| Technology | E-mode |
| Pd - Power Dissipation | 21W |
| RDS(on) | 240mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 1pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 414pF |
650V 6.5A 2.4V 21W 240mΩ 1 N-channel N-Channel PQFN-8(8x8) Single FETs, MOSFETs RoHS