RENESAS TP65H150G4PS

RENESAS · FETs & Power MOSFETs · MPN TP65H150G4PS

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)8nC
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation83W
TechnologyE-mode
RDS(on)150mΩ
Reverse Transfer Capacitance (Crss@Vds)1pF
Number1 N-channel
Input Capacitance(Ciss)598pF

Technical details

650V 16A 4V 83W 150mΩ 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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