RENESAS · FETs & Power MOSFETs · MPN TP65H100G4PS
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| Gate Charge(Qg) | 14.4nC |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 18.9A |
| Output Capacitance(Coss) | 53pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.65V |
| Technology | E-mode |
| Pd - Power Dissipation | 65.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 3.6pF |
| RDS(on) | 92mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 818pF |
650V 18.9A 3.65V 65.8W 92mΩ 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS