RENESAS · FETs & Power MOSFETs · MPN TP65H070G4LSGB-TR
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 8.4nC |
| Current - Continuous Drain(Id) | 29A |
| Output Capacitance(Coss) | 74pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 96W |
| Technology | E-mode |
| RDS(on) | 72mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| Number | - |
| Input Capacitance(Ciss) | 600pF |
650V 29A 4V 96W 72mΩ PQFN-8(8x8) Single FETs, MOSFETs RoHS