RENESAS · FETs & Power MOSFETs · MPN TP65H050G4WS
No reviews yet — be the first to review RENESAS TP65H050G4WS.
| Gate Charge(Qg) | 16nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 34A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 119W |
| Technology | E-mode |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF |
| RDS(on) | 50mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1000pF |
650V 34A 4V 119W 50mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS