RENESAS · FETs & Power MOSFETs · MPN TP65H035G4WS
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| Gate Charge(Qg) | 22nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 147pF |
| Current - Continuous Drain(Id) | 46A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 156W |
| Technology | E-mode |
| RDS(on) | 35mΩ |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1500pF |
650V 46A 4V 156W 35mΩ 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS