RENESAS · FETs & Power MOSFETs · MPN TP65H030G4PQS-TR
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| Gate Charge(Qg) | 24.5nC |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 127pF |
| Current - Continuous Drain(Id) | 55.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Technology | D-mode |
| Pd - Power Dissipation | 192W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.6pF |
| RDS(on) | 30mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1500pF |
650V 55.7A 4V 192W 30mΩ 1 N-channel N-Channel Single FETs, MOSFETs RoHS