RENESAS · FETs & Power MOSFETs · MPN RQK0604IGDQA#H1
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| Gate Charge(Qg) | 3.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.4V |
| Pd - Power Dissipation | 800mW |
| RDS(on) | 180mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| Input Capacitance(Ciss) | 320pF |
| Type | N-Channel |
60V 2A 1.4V 800mW 180mΩ@2.5V N-Channel SOT-23-3 Single FETs, MOSFETs RoHS