RENESAS RQJ0201UGDQA#H1

RENESAS · FETs & Power MOSFETs · MPN RQJ0201UGDQA#H1

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)6.3nC@10V
Current - Continuous Drain(Id)3.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation800mW
RDS(on)69mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)93pF
Input Capacitance(Ciss)597pF
TypeP-Channel

Technical details

20V 3.4A 800mW 69mΩ@4.5V P-Channel Single FETs, MOSFETs RoHS

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