RENESAS RJK60S7DPP-E0#T2

RENESAS · FETs & Power MOSFETs · MPN RJK60S7DPP-E0#T2

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)39nC@10V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation34.7W
RDS(on)125mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.3nF

Technical details

600V 30A 3V 34.7W 125mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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