RENESAS · FETs & Power MOSFETs · MPN RJK6014DPP-E0#T2
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| Gate Charge(Qg) | 45nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 170pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 35W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 575mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.8nF |
600V 16A 3V 35W 575mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS