RENESAS · FETs & Power MOSFETs · MPN RJK6009DPP-00#T2
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 600V |
| Output Capacitance(Coss) | 205pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 40W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 480mΩ@10V |
| Input Capacitance(Ciss) | 2.1nF |
| Type | N-Channel |
600V 18A 4.5V 40W 480mΩ@10V N-Channel Single FETs, MOSFETs RoHS