RENESAS RJK4006DPD-00#J2

RENESAS · FETs & Power MOSFETs · MPN RJK4006DPD-00#J2

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Specifications

Gate Charge(Qg)20nC@320V
Drain to Source Voltage400V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation65W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)620pF
TypeN-Channel

Technical details

400V 8A 4.5V 65W 800mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS

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