RENESAS RJK2017DPP-M0#T2

RENESAS · FETs & Power MOSFETs · MPN RJK2017DPP-M0#T2

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)47mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.8nF

Technical details

200V 45A 4V 30W 47mΩ@10V 1 N-channel TO-220FL Single FETs, MOSFETs RoHS

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