RENESAS RJK2017DPE-00#J3

RENESAS · FETs & Power MOSFETs · MPN RJK2017DPE-00#J3

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Specifications

Gate Charge(Qg)66nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation100W
RDS(on)47mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)90pF
Input Capacitance(Ciss)4.8nF
TypeN-Channel

Technical details

200V 45A 2V 100W 47mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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