RENESAS RJK1002DPN-A0#T2

RENESAS · FETs & Power MOSFETs · MPN RJK1002DPN-A0#T2

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)94nC
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)7.6mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)6.45nF
TypeN-Channel

Technical details

100V 70A 2V 150W 7.6mΩ@10V 1 N-channel N-Channel TO-220FPA Single FETs, MOSFETs RoHS

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