RENESAS · FETs & Power MOSFETs · MPN RJK0856DPB-00#J5
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 40nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 155pF |
| RDS(on) | 8.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3nF |
80V 35A 4V 65W 8.9mΩ@10V 1 N-channel SC-100(SOT-669) Single FETs, MOSFETs RoHS