RENESAS · FETs & Power MOSFETs · MPN RJK0855DPB-00#J5
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 11mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
| Type | N-Channel |
80V 30A 4V 60W 11mΩ@10V 1 N-channel N-Channel SOT-669 Single FETs, MOSFETs RoHS