RENESAS · FETs & Power MOSFETs · MPN RJK03E3DNS-00#J5
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| Gate Charge(Qg) | 5.7nC |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 10W |
| Reverse Transfer Capacitance (Crss@Vds) | 63pF |
| RDS(on) | 17.6mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.05nF |
| Type | N-Channel |
30V 14A 2.5V 10W 17.6mΩ@4.5V 1 N-channel N-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS