RENESAS RJK03E3DNS-00#J5

RENESAS · FETs & Power MOSFETs · MPN RJK03E3DNS-00#J5

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Specifications

Gate Charge(Qg)5.7nC
Drain to Source Voltage30V
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation10W
Reverse Transfer Capacitance (Crss@Vds)63pF
RDS(on)17.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.05nF
TypeN-Channel

Technical details

30V 14A 2.5V 10W 17.6mΩ@4.5V 1 N-channel N-Channel HWSON-8(3.3x3.3) Single FETs, MOSFETs RoHS

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