RENESAS · FETs & Power MOSFETs · MPN RBA250N10CHPF-4UA02#GB0
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 348W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 2.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 9.5nF |
| Type | N-Channel |
100V 250A 3.8V 348W 2.4mΩ@10V 1 N-channel N-Channel TO-263-6 Single FETs, MOSFETs RoHS