RENESAS · FETs & Power MOSFETs · MPN RBA250N04AHPF-4UA01#GB0
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| Gate Charge(Qg) | 368nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 2.22nF |
| Current - Continuous Drain(Id) | 250A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 348W |
| Reverse Transfer Capacitance (Crss@Vds) | 1.22nF |
| RDS(on) | 0.85mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 19.35nF |
| Type | N-Channel |
40V 250A 4V 348W 0.85mΩ@10V 1 N-channel N-Channel TO-263-6 Single FETs, MOSFETs RoHS